Power Scaling of InP based Photonic Crystal Surface Emitting Lasers for CWDM Optical Interconnects in Hyperscale Datacenters

Calum H. Hill, Connor W. Munro, J. Orchard, Ibrahim Javed, P. Ivanov, N. Gerrard, A. McKenzie, R. Hogg, R. J. Taylor, D. Childs
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Abstract

We demonstrate power scaling of InP substrate emitting PCSELs by increasing device size. A maximum power of 713mW was obtained. We attribute improved slope efficiency of larger devices to reduced in-plane loss. These devices are suitable for integration into hybrid, co-packaged optical transceivers in datacenters.
超大规模数据中心CWDM光互连中基于InP光子晶体表面发射激光器的功率缩放
我们通过增加器件尺寸证明了InP衬底发射PCSELs的功率缩放。获得了713mW的最大功率。我们将较大器件的斜率效率的提高归因于面内损耗的减少。这些器件适合集成到数据中心的混合、共封装光收发器中。
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