A numerical study of oxygen precipitation in CZ-silicon: LO-HI and CMOS-type thermal cycles

[1991 Proceedings] Eleventh IEEE/CHMT International Electronics Manufacturing Technology Symposium Pub Date : 1991-09-16 DOI:10.1109/IEMT.1991.279759

M. Schrems, G. Hobler, H. Potzl, J. Hage

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Abstract

Control of oxygen precipitation is important for increasing the yield in ULSI-processing. In the present work, computer modeling is used to investigate the formation of oxygen precipitates during double-step (LO-HI) and multi-step CMOS-type thermal anneals. The calculations agree well with a large number of experimental results. The proposed model is used to investigate the influence of processing parameters such as initial oxygen content, annealing temperature and time, and the thermal history of wafers on the amount of precipitation observed. The model is also used to determine 2-step and 3-step substitutional anneals showing precipitation behavior similar to that of a multi-step CMOS-type anneal. It is concluded that application of the computer model offers the potential of reducing both time and costs for the development of shorter substitutional thermal processes, which are necessary for routine testing of the precipitation behavior of wafers used in multi-step device processing.<>

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cz -硅:LO-HI和cmos型热循环中氧沉淀的数值研究

控制氧析出是提高超低氮化硅生产收率的重要因素。在本工作中，使用计算机建模来研究双步(LO-HI)和多步cmos型热退火过程中氧沉淀的形成。计算结果与大量实验结果吻合较好。利用该模型研究了初始氧含量、退火温度和时间以及晶圆的热历史等工艺参数对析出量的影响。该模型还用于确定2步和3步替代退火，其析出行为类似于多步cmos型退火。结论是，计算机模型的应用为开发更短的替代热过程提供了减少时间和成本的潜力，这对于多步骤器件加工中使用的晶圆的沉淀行为的常规测试是必要的

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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[1991 Proceedings] Eleventh IEEE/CHMT International Electronics Manufacturing Technology Symposium

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