Modular Design Approach for a 2-8 GHz GaAs MMIC Feedback Amplifier

Abstract

A two-stage GaAs MMIC feedback amplifier has been developed with nominal 10 dB gain, 2:1 VSWR, and 6 dB noise figure over the 2-8 GHz band. A modular design approach enabled RF wafer probing of the entire 1.25 × 1.50 mm chip, its bias, matching, and feedback networks, as well as the individual active and passive elements of these networks. The analysis and interpretation of these results, along with their implication for MMIC design, will be discussed.