Simulation and analysis of RF MEMS cantilever switch for low actuation voltage

A. Khan, T. Shanmuganantham
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引用次数: 5

Abstract

Nowadays, Radio Frequency (RF) Microelectromechanical system (MEMS) switches are getting more popular in the electronics field. Since consumption of power has become the highest concern in many electronics devices. The main problem for using RF MEMS switches is its high actuation voltage. Thus this paper generally concentrate on the analysis and simulation of RF MEMS metal contact switch having a n-shaped cantilever beam to obtain the low actuation voltage. Simulations are done using the finite element modelling. Intellisuite 8.7v software have been used to get the results of the switch. The design has been revised in terms of thickness of the beam and air gap to carry out electrostatic actuation mechanism. The pull-in voltage is obtained to be 2.6 V.
低驱动电压射频MEMS悬臂开关的仿真与分析
目前,射频(RF)微机电系统(MEMS)开关在电子领域越来越受欢迎。由于功耗已成为许多电子设备中最受关注的问题。使用射频MEMS开关的主要问题是其高驱动电压。因此,本文主要对具有n形悬臂梁的RF MEMS金属触点开关进行分析和仿真,以获得较低的驱动电压。利用有限元模型进行了仿真。使用intellisite 8.7v软件得到开关结果。在梁的厚度和气隙方面对设计进行了修改,以实现静电驱动机构。拉入电压为2.6 V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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