Set/reset statistics and kinetics in phase change memory arrays

Abstract

The development of next-generation PCM arrays requires a better understanding of set/reset processes at statistical level. This work presents experimental programming characteristics on 45 nm arrays and analyzes the statistical distribution of set/reset program and read currents. Results show (i) a reset-voltage dependence for both the melt current and the crystallization kinetics and (ii) a reduced crystallization spread in the high-temperature (set) regime, compared to the low-temperature (retention) one.