Investigation of double-emitter reduced-surface-field horizontal current bipolar transistor breakdown mechanisms

M. Koričić, J. Žilak, T. Suligoj
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引用次数: 1

Abstract

Breakdown behavior of double-emitter reduced-surface-field horizontal current bipolar transistor is extensively analyzed by measurements and 3D device simulations. By the addition of the 2nd drift region, BVCEO of double-emitter structure is improved from 12 V up to 36 V and can be tuned by the length of the drift region. By increasing the length of the drift region, positive feedback loop of the common-emitter soft-breakdown can be completely broken making the BVCEO independent on transistor current gain. Transistors with BVCEO and BVCBO equal to the collector-substrate breakdown voltage are demonstrated. We also report that base current reversal in forced-VBE measurement does not occur and cannot be used for accurate determination of BVCEO of analyzed structures.
双极发射极减小表面场水平电流双极晶体管击穿机理的研究
通过测量和三维器件仿真,广泛分析了双发射极低表面场水平电流双极晶体管的击穿行为。通过增加第二个漂移区,双发射极结构的BVCEO从12 V提高到36 V,并可通过漂移区长度进行调谐。通过增加漂移区长度,可以完全打破共发射极软击穿的正反馈环,使BVCEO与晶体管电流增益无关。演示了BVCEO和BVCBO等于集电极-衬底击穿电压的晶体管。我们还报道了在强制vbe测量中不会发生基极电流反转,并且不能用于分析结构的BVCEO的准确测定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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