Integration of CVD W on MOCVD TiN

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 2001-04-18 DOI:10.1109/VTSA.2001.934534

C. Yu, M.Y. Wang, S. Shue, C. Yu, M. Liang

引用次数: 1

Abstract

The integration issue of MOCVD TiN and CVD W has been investigated. The step coverage of tungsten layer was found to depend strongly on the MOCVD TiN layer. An additional thermal cycle can significantly improve step coverage of tungsten. Though the Rc value is not dependent on the step coverage of tungsten, the reliability issue is still a concern.

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CVD W与MOCVD TiN的集成

研究了MOCVD TiN和CVD W的集成问题。钨层的台阶覆盖率与MOCVD TiN层密切相关。一个额外的热循环可以显著提高钨的台阶覆盖率。虽然Rc值不依赖于钨的阶跃覆盖率，但可靠性问题仍然是一个值得关注的问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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