Synthesis of WO3 Nanostructures and Their Nanocomposites with Graphene Derivatives via Novel Chemical Approach

R. Hatel, M. Baitoul
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引用次数: 1

Abstract

Trioxide Tungsten (WO3), an n-type semiconductor that exhibits a wide band gap of 2.5 to 3.6 eV, has attracted special attention from the scientific community. This attraction is due to its manifold properties, which not only follow the development of technologies, but accelerate it. There are several methods to synthesize WO3 nanostructures with various morphologies. In the present study, for the first time, a novel chemical method was developed for the preparation of WO3 nanostructures by using tungsten carbide (WC) as precursor. This novel approach has many advantages such as high yields, simple methodology and easy work up. Moreover, graphene oxide coated with WO3 nanostructured is prepared via in-situ and ex-situ chemical approaches followed by subsequent thermal treatment at 500°C. The obtained samples were characterized by different techniques to confirm the transformation of WC to WO3 nanostructures and the formation of their nanocomposites with graphene derivatives.
新化学方法合成WO3纳米结构及其石墨烯衍生物纳米复合材料
三氧化钨(WO3)是一种具有2.5 ~ 3.6 eV宽带隙的n型半导体,受到了科学界的特别关注。这种吸引力是由于它的多种特性,这些特性不仅伴随着技术的发展,而且加速了技术的发展。有几种方法可以合成具有不同形貌的WO3纳米结构。本研究首次提出了以碳化钨(WC)为前驱体制备WO3纳米结构的新化学方法。这种新方法具有收率高、方法简单、易于操作等优点。此外,通过原位和非原位化学方法制备了氧化石墨烯包覆WO3纳米结构,然后在500℃下进行热处理。采用不同的技术对所得样品进行表征,以确定WC向WO3纳米结构的转变及其与石墨烯衍生物的纳米复合材料的形成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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