Random Telegraph Noise in 130 nm n-MOS and p-MOS Transistors

Abstract

Introduction The low-frequency noise performance of MOSFETs is dominated by the effects of carrier trapping and de-trapping into oxide defects [1]. Capture and emission of a carrier by the single trap result in discrete modulation of the channel current which resembles a random telegraph signal. As the gate area of devices decreases, AId/ld fluctuations give a significant issue for advanced low power analog and mixedmode circuitry [2]. So it is very important to examine RTS noise characteristic of the small devices. It has been accepted that low frequency noise comes from both number and mobility fluctuations. In this paper, scattering coefficient (a) has been extracted through the analysis of the amplitude of the drain current fluctuations for 130 nm n-MOSFETs and pMOSFETs. The relative contribution of number and mobility fluctuations is examined and the effect of trap's depth on noise amplitude is also considered.