Investigation of the construction of the phase shifter based on a 3-dB directional coupler

Abstract

This paper deals with a new implementation of the design of a semiconductor phase shifter of the reflective type realized on the basis of a 3-dB directional coupler with a central operating frequency of 2000 MHz. Obtaining the necessary phase shifts at the output is realized by connecting additional microstrip segments using p-i-n-diodes. So, when connecting lengths λ/4, λ /8, λ /16, a phase change at the output of the phase shifter by 180°, 90° and 45° is obtained, respectively. The computer simulation of the phase shifter characteristics is performed in the AWR Design Environment program.