Design and fabrication of SiC MESFET transistor and broadband power amplifier for RF applications

Abstract

A SiC MESFET package and a prototype power amplifier module were demonstrated with P/sub 1dB/ output power of 26 W and 35 W, respectively. High power and high power gain were maintained through 950 MHz to 1500 MHz L-band operation across 500 MHz bandwidth for the SiC PA module, which is a critical challenge to other semiconductor devices.