{"title":"Deep silicon etching for X-ray diffraction devices fabrication","authors":"H. Miao, M. Mirzaeimoghri, Lei Chen, H. Wen","doi":"10.1109/OMN.2017.8051446","DOIUrl":null,"url":null,"abstract":"We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.","PeriodicalId":411243,"journal":{"name":"2017 International Conference on Optical MEMS and Nanophotonics (OMN)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Optical MEMS and Nanophotonics (OMN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMN.2017.8051446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report deep reactive ion etching of silicon gratings via cryogenic and Bosch processes. An aspect ratio of > 50 is achieved for 400 nm period gratings with both processes.