E/sup 2/PROM product issues and technology trends

Abstract

The E/sup 2/PROM (electrically erasable and programmable read-only memory), the fastest growing new form of solid-state memory, combines nonvolatility and changeability which can be changed by simple logic-level signals, therefore providing in-system change capability. Since time-to-market is a crucial system issue, as frequent changes in multiple location and rapid obsolescence are pressing problems. E/sup 2/PROMs, acting as nonvolatile memories and peripherals in up-based systems, play a growing role in presenting a solution. E/sup 2/PROM technology is divided into two major approaches. One approach is an extension of the basic floating-gate concept used in EPROMs. The other is a nitride technique called MNOS which has existed over several decades. E/sup 2/PROM system applications are discussed. The most advanced E/sup 2/PROMs today are easy-to-use single 5-V power supply, high-speed CMOS devices. It is noted that, with the obstacles of the past removed, E/sup 2/PROMs are increasingly being used in new designs.<>