A 12 nA Ultra-Low Quiescent Current Capacitor-Less LDO with 350 ns Fast Transient Response

Nixiao Yan, Xin Zhang, C. Shi, Leilei Huang, Guangsheng Chen, Runxi Zhang
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引用次数: 0

Abstract

This paper presents an output capacitor-less, dual power transistors low-dropout (LDO) regulator with ultra-low quiescent current in 55 nm CMOS process. The LDO employs an adaptive stage to make the LDO a two-stage topology at light load and a three-stage topology at heavy load. A co-enhanced transient circuit is introduced by adding the extra switching current to improve the slew rate without any quiescent current. The simulated results show that the LDO with a quiescent current of 12 nA and a power supply range from 2.5 to 3.6 V achieves a stable 1.2 V output. When the load current changes in steps of $10 \mu \mathrm{A} -20$ mA with a rise time and a fall time of 200 ns, the LDO can recover within 350 ns and 490 ns.
具有350 ns快速瞬态响应的12 nA超低静态电流无电容LDO
提出了一种无输出电容、双功率晶体管的超低静态电流LDO稳压器。LDO采用自适应级,使LDO在轻负载时为两级拓扑,在高负载时为三级拓扑。在不增加静态电流的情况下,通过增加额外的开关电流来提高转换速率,从而引入了一种共增强瞬态电路。仿真结果表明,在静态电流为12 nA,电源范围为2.5 ~ 3.6 V的情况下,LDO可以实现稳定的1.2 V输出。当负载电流以$10 \mu \ mathm {A} -20$ mA的阶跃变化,上升时间和下降时间分别为200 ns时,LDO可以在350 ns和490 ns内恢复。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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