1500 V and 10 A SiC motor drive inverter module

Abstract

This paper reports the design, fabrication, and electrical performance of 1500 V SiC MOS-enhanced JFETs and a SiC inverter module with a power rating of 1500 V and 10A using SiC Schottky diodes as the free wheeling diode (FWD). The static and dynamic characterization of 1500 V SiC MOS-enhanced JFETs and SiC Schottky FWDs were performed and packaged into phase leg inverter modules. A demonstration of a 1500 V and 10 A SiC inverter module in a motor drive at bus voltage of 600 V was successfully implemented. This is the highest bus voltage reported on SiC inverter modules.