Investigation of carbon-silicon schottky diodes and their use as chemical sensors

Abstract

Schottky barrier diodes (SBDs) with different carbon materials, namely pyrolytic carbon, glassy carbon and graphene have been investigated. The devices have been characterized structurally with HRTEM and Raman spectroscopy. From current-voltage measurements, diode parameters including the ideality factor, the Schottky barrier height and the series resistance are extracted. With graphene it is possible to modify device performance through chemical doping of its monolayer surface. The change in diode performance can be correlated with the charge transfer from various adsorbents. As a result the Graphene Diodes Sensor (GDS) can be used as a probe for various chemicals.