Ruthenium films deposited under H2 by MOCVD using a novel liquid precursor

Abstract

Ruthenium thin films were deposited under H2 using a novel liquid Ru precursor, bis(acetylacetonato)(η4-1,5-hexadiene)ruthenium, Ru(acac)2(hd). The resisitivity, cross section and surface morphology of the deposited Ru films were examined. The Ru films had a relatively low resistivity of about 90 µΩ·cm at 270°C. X-ray photoelectron spectroscopy (XPS) showed that the Ru films contained no carbon and oxygen impurities. The Ru film surface was fairly smooth, as measured by atomic force microscopy (AFM). The root-mean-square (RMS) roughness of the Ru films was 0.34nm. No incubation time of the formation of the Ru films was observed. The activation energy of the formation of the Ru films was found to be 0.51eV on the SiO2/Si substrates.