An asynchronous GaAs MESFET static RAM using a new current mirror memory cell

Abstract

An experimental 1 kB GaAs MESFET static RAM using a new memory cell has been designed, fabricated and tested. The new memory cell is not subject to the destructive read problems which constrain the design of the conventional six-transistor memory cell. The memory cell also provides a much larger access current for readout than is possible using a conventional memory cell of the same area and cell power. Address access times of 1.6 ns have been obtained from a 1 kb test circuit.<>