A process scalable voltage-reference-free temperature sensor utilizing MOSFET threshold voltage variation

Shogo Harada, Mahfuzul Islam, T. Hisakado, O. Wada
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引用次数: 2

Abstract

This paper proposes a temperature sensing mechanism that utilizes the threshold voltage variation of MOSFETs. The sensor statistically selects two MOSFETs with an appropriate threshold voltage difference to obtain a current ratio proportional to absolute temperature. As the threshold voltage difference acts as a voltage reference, a wide-voltage operation becomes possible without the need for an accurate voltage reference. The sensor sorts the current values during the start-up and automatically selects the two MOSFETs based on predefined rank values. A cell-based implementation of the sensor in a 65 nm bulk low-power CMOS process shows a peak-to-peak inaccuracy of $-0.5/+1.4^{\circ}{\mathrm {C}}$ after a 2-point calibration over $0\sim 100^{\circ}{\mathrm {C}}$, and a line sensitivity of $14^{\circ}{\mathrm {C/V}}$ over 0.8~1.2 V operation.
一种利用MOSFET阈值电压变化的过程可扩展无电压参考温度传感器
本文提出了一种利用mosfet阈值电压变化的温度传感机制。传感器统计地选择两个具有适当阈值电压差的mosfet,以获得与绝对温度成正比的电流比。由于阈值电压差作为电压基准,因此无需精确的电压基准就可以实现宽电压操作。传感器在启动过程中对电流值进行排序,并根据预定义的秩值自动选择两个mosfet。基于单元的传感器实现在65 nm块体低功耗CMOS工艺中显示,在$0\sim $ 100^{\circ}{\ mathm {C}}$ 2点校准后,峰对峰误差为$-0.5/+1.4^{\circ}{\ mathm {C}}$,在0.8~1.2 V工作时,线灵敏度为$14^{\circ}{\ mathm {C/V} $。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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