Shogo Harada, Mahfuzul Islam, T. Hisakado, O. Wada
{"title":"A process scalable voltage-reference-free temperature sensor utilizing MOSFET threshold voltage variation","authors":"Shogo Harada, Mahfuzul Islam, T. Hisakado, O. Wada","doi":"10.1109/A-SSCC53895.2021.9634727","DOIUrl":null,"url":null,"abstract":"This paper proposes a temperature sensing mechanism that utilizes the threshold voltage variation of MOSFETs. The sensor statistically selects two MOSFETs with an appropriate threshold voltage difference to obtain a current ratio proportional to absolute temperature. As the threshold voltage difference acts as a voltage reference, a wide-voltage operation becomes possible without the need for an accurate voltage reference. The sensor sorts the current values during the start-up and automatically selects the two MOSFETs based on predefined rank values. A cell-based implementation of the sensor in a 65 nm bulk low-power CMOS process shows a peak-to-peak inaccuracy of $-0.5/+1.4^{\\circ}{\\mathrm {C}}$ after a 2-point calibration over $0\\sim 100^{\\circ}{\\mathrm {C}}$, and a line sensitivity of $14^{\\circ}{\\mathrm {C/V}}$ over 0.8~1.2 V operation.","PeriodicalId":286139,"journal":{"name":"2021 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/A-SSCC53895.2021.9634727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper proposes a temperature sensing mechanism that utilizes the threshold voltage variation of MOSFETs. The sensor statistically selects two MOSFETs with an appropriate threshold voltage difference to obtain a current ratio proportional to absolute temperature. As the threshold voltage difference acts as a voltage reference, a wide-voltage operation becomes possible without the need for an accurate voltage reference. The sensor sorts the current values during the start-up and automatically selects the two MOSFETs based on predefined rank values. A cell-based implementation of the sensor in a 65 nm bulk low-power CMOS process shows a peak-to-peak inaccuracy of $-0.5/+1.4^{\circ}{\mathrm {C}}$ after a 2-point calibration over $0\sim 100^{\circ}{\mathrm {C}}$, and a line sensitivity of $14^{\circ}{\mathrm {C/V}}$ over 0.8~1.2 V operation.