A new concept for the lateral DMOS transistor for smart power IC's

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764055

M. Zitouni, F. Morancho, P. Rossel, H. Tranduc, J. Buxo, I. Pagès

引用次数: 36

Abstract

In this paper, a new concept of lateral DMOSFET for smart power integrated circuits is proposed, in which a vertical trench is used under the gate end in the drift region.

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一种用于智能功率集成电路的横向DMOS晶体管新概念

本文提出了一种用于智能功率集成电路的横向DMOSFET的新概念，该概念在栅极端下的漂移区采用垂直沟槽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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