Thermoelectric properties of p-type filled skutterudites SxCo4Sb12

Sanyukta Ghosh, K. K. Raut, A. Ramakrishnan, Kuei-Hsien Chen, Soon-jik Hong, R. Mallik
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引用次数: 2

Abstract

. The electronegativity difference between the filler and the host atom of skutterudites determines the bonding type, which effects the thermoelectric properties. The electropositive elements with low electronegativity compared to Sb atom can form n-type filled skutterudites. In this study, the electronegative element sulphur has filled into voids. A series of S x Co 4 Sb 12 (x= 0.05 to 0.4) compounds were synthesized by the solid-state method. CoSbS secondary phase was observed for x > 0.05. Filling fraction of sulphur into the void (̴ 0.04) was calculated using electron probe microanalyzer which agrees with Rietveld refinement of the X-ray diffraction pattern. The transport properties were measured from 350 K to 723 K. The positive Seebeck coefficient (S) confirms p-type semiconducting nature. S and the electrical resistivity (ρ) decreased with increasing x due to increased carrier concentration (n). All the samples except x =0.05 possess almost same S and ρ due to saturation of filling fraction. The enhanced phonon scattering in S x Co 4 Sb 12 resulted in low thermal conductivity (κ). The highest zT of 0.18 at 623 K was achieved for S 0.15 Co 4 Sb 12 .
p型填充方突石SxCo4Sb12的热电性质
. 填充物与母原子之间的电负性差异决定了成键类型,从而影响了材料的热电性能。与Sb原子相比,电负性较低的电正性元素可以形成n型填充的角钨矿。在这项研究中,电负性元素硫被填充到空隙中。采用固相法合成了一系列sxco4sb12 (x= 0.05 ~ 0.4)化合物。x > 0.05为CoSbS第二阶段。利用电子探针微量分析仪计算了硫的填充分数(0.04),符合x射线衍射图的Rietveld细化。在350 ~ 723 K范围内测量了输运性质。正塞贝克系数(S)证实了p型半导体性质。由于载流子浓度(n)的增加,S和电阻率(ρ)随x的增加而减小,除x =0.05外,其余样品的S和ρ基本相同,这是由于填充分数饱和所致。声子在sxco4sb12中的散射增强导致其导热系数(κ)降低。s0.15 co4sb12在623 K时zT最高,为0.18。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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