Simulating the effects of single-event and radiation phenomena on GaAs MESFET integrated circuits

Abstract

A device model is described for the simulation of the effects of single-event and radiation phenomena on the operation of GaAs MESFETs. The model can be utilized in a circuit simulator to evaluate integrated-circuit designs and aid in the provision of adequate upset margins for various operating environments. Additional subcircuit construction is unnecessary since the electrical responses to the different phenomena are intrinsic to the device template. Example simulations using SPICE3 are described