Channel design of silicon-on-insulator (SOI) MOSFET for low-voltage low-power application

Abstract

For silicon-on-insulator (SOI) technology compared with the bulk circuit, an obvious improvement in power consumption and speed is always observed for the corresponding SOI circuit. Due to their electrical properties, SOI devices may be a solution for low-power application. But FD devices and PD devices have different properties. Detailed analysis and comparison between the different SOI devices operating at low voltage is needed. In this paper, Medici 4.0 is used to study FD and FD devices. Different device parameter influence on devices and circuits behaviour is described.