Implementation of ARM® Cores in FinFET technolgies

Y. Laplanche
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Abstract

We present the main process steps in FinFET technologies in the 14/16nm nodes that shape the designer's work and discuss their implications at the Physical IP level. The document is particularly focused on the impact of the devices and the back-end-of-line on standard cell architectures.
ARM®内核在FinFET技术中的实现
我们介绍了14/16nm节点中FinFET技术的主要工艺步骤,这些步骤影响了设计师的工作,并讨论了它们在物理IP级别的含义。该文档特别关注设备和后端线对标准单元体系结构的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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