Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory

Abstract

In this study, we demonstrate for the first time the multi-level capable 3D ferroelectricNAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4 V program/erase window. We also reported cycling and retention characteristics.