Through silicon via impact on above BEoL Time Dependent Dielectric Breakdown

Abstract

The impact of Through Silicon Via (TSV) on above BEoL dielectric reliability is studied. Time Dependent Dielectric Breakdown (TDDB) is performed on copper dual damascene combs, fabricated in a 65 nm technology node with a SiOCH low-k dielectric, and designed above 10μm diameter and 80μm thick TSVs, processed through a via-middle approach.