Defect characterisation and reduction on a multi-chamber inter layer dielectric (ILD) tool

B. Prendergast, P. Hudson
{"title":"Defect characterisation and reduction on a multi-chamber inter layer dielectric (ILD) tool","authors":"B. Prendergast, P. Hudson","doi":"10.1109/ASMC.1995.484407","DOIUrl":null,"url":null,"abstract":"Due to the decreasing geometry and increased production complexity in the Semiconductor industry, particle defects have become more critical in regard to wafer yield parameters. Current cleanroom technology success leads to contamination being attributed mainly to equipment operation. One of the key mechanisms is wearout of equipment parts. This paper discusses the techniques applied at Fab 10, Intel's European Semiconductor Manufacturing site and the success of correlating machine components wearout to metrology measurements. In 1 micron technology days, one could visually inspect machine components during preventive maintenance and make a \"judgment call\" on replacement. However, risks are too great in sub-micron technology where a flake from a worn-out part can cost several die and contaminate downstream tools. In an effort to put more science into the changeout frequency of parts, removing subjectivity, a Noran 'Voyager 2100' Microanalysis system on an Amray 2030L FESEM was used to collect and analyze the X-rays from both defects on blank oxide wafers and machine parts. A background baseline of new multi-chamber ILD Chemical Vapour Deposition (CVD) machines was initially performed, which corresponded to normal station monitor defect counts. When defect monitors on a particular machine trend upwards, further monitors were performed. In tandem, a basic description of machine components was obtained from the vendor for approved materials. Where we did not have specific composition of suspect parts, the suspect part would be changed out and another Energy Dispersive X-ray Spectroscopy (EDX) monitor performed. We were able to obtain spectra of submicron defects on blanket oxide wafers which were held in a catalog and compared to analysis results of machine parts such as o-ring wearout of chamber doors, showerhead wearout and quality of graphite components. The information allowed us to set realistic changeout frequency of parts before they became a problem. The EDX analysis was backed up by inline metrology measurements on product. The success of this led to EDX on a new inline system being the standard test before the ILD process tool was vented up for troubleshooting. From the spectra information library, a response flow checklist (RFC) was written, which is now used as a standard method of troubleshooting Out Of Control (OOCs) particle situations. This is also the standard test performed when upgrades/new parts are being qualified in our tools.","PeriodicalId":237741,"journal":{"name":"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1995.484407","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Due to the decreasing geometry and increased production complexity in the Semiconductor industry, particle defects have become more critical in regard to wafer yield parameters. Current cleanroom technology success leads to contamination being attributed mainly to equipment operation. One of the key mechanisms is wearout of equipment parts. This paper discusses the techniques applied at Fab 10, Intel's European Semiconductor Manufacturing site and the success of correlating machine components wearout to metrology measurements. In 1 micron technology days, one could visually inspect machine components during preventive maintenance and make a "judgment call" on replacement. However, risks are too great in sub-micron technology where a flake from a worn-out part can cost several die and contaminate downstream tools. In an effort to put more science into the changeout frequency of parts, removing subjectivity, a Noran 'Voyager 2100' Microanalysis system on an Amray 2030L FESEM was used to collect and analyze the X-rays from both defects on blank oxide wafers and machine parts. A background baseline of new multi-chamber ILD Chemical Vapour Deposition (CVD) machines was initially performed, which corresponded to normal station monitor defect counts. When defect monitors on a particular machine trend upwards, further monitors were performed. In tandem, a basic description of machine components was obtained from the vendor for approved materials. Where we did not have specific composition of suspect parts, the suspect part would be changed out and another Energy Dispersive X-ray Spectroscopy (EDX) monitor performed. We were able to obtain spectra of submicron defects on blanket oxide wafers which were held in a catalog and compared to analysis results of machine parts such as o-ring wearout of chamber doors, showerhead wearout and quality of graphite components. The information allowed us to set realistic changeout frequency of parts before they became a problem. The EDX analysis was backed up by inline metrology measurements on product. The success of this led to EDX on a new inline system being the standard test before the ILD process tool was vented up for troubleshooting. From the spectra information library, a response flow checklist (RFC) was written, which is now used as a standard method of troubleshooting Out Of Control (OOCs) particle situations. This is also the standard test performed when upgrades/new parts are being qualified in our tools.
多腔层间电介质(ILD)工具的缺陷表征与减少
由于半导体工业中几何形状的减少和生产复杂性的增加,颗粒缺陷在晶圆良率参数方面变得更加关键。目前洁净室技术的成功导致污染主要归因于设备操作。其中一个关键机制是设备部件的磨损。本文讨论了在英特尔欧洲半导体制造基地Fab 10应用的技术,以及将机器部件磨损与计量测量相关联的成功。在1微米技术的日子里,人们可以在预防性维护期间直观地检查机器部件,并对更换做出“判断”。然而,在亚微米技术中,一个磨损部件的碎片可能会花费几个模具,并污染下游工具,风险太大。为了使零件更换频率更加科学,消除主观性,在Amray 2030L FESEM上使用Noran 'Voyager 2100'微分析系统收集和分析空白氧化晶片和机器零件缺陷的x射线。新的多室ILD化学气相沉积(CVD)机器的背景基线最初被执行,这对应于正常站监测缺陷计数。当一个特定机器上的缺陷监视呈上升趋势时,将执行进一步的监视。同时,从供应商处获得了批准材料的机器部件的基本描述。当我们没有可疑部件的具体成分时,可疑部件将被更换,并进行另一次能量色散x射线光谱(EDX)监测。我们能够获得包层氧化晶圆上亚微米缺陷的光谱,这些缺陷被保存在目录中,并与机器部件的分析结果进行比较,例如舱门的o形环磨损,淋浴喷头磨损和石墨组件的质量。这些信息使我们能够在零件成为问题之前设置实际的更换频率。EDX分析得到了产品在线计量测量的支持。这一成功使得EDX在一个新的内联系统上成为了标准测试,然后将ILD过程工具用于故障排除。从光谱信息库中,编写了响应流程清单(RFC),该清单现在用作排除失控(OOCs)颗粒情况的标准方法。这也是在我们的工具中进行升级/新零件合格时执行的标准测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信