{"title":"SnO2-Pd as a Gate Material for the Capacitor Type Gas Sensor","authors":"N. Samotaev, K. Oblov, A. Litvinov, M. Etrekova","doi":"10.1109/MIEL.2019.8889648","DOIUrl":null,"url":null,"abstract":"The article describes the result of the use SnO<inf>2</inf>-Pd thin films as a gate for structure measured ppb range of NO<inf>2</inf> gas by the capacitive method. The technological aspects of fabrication SnO<inf>2</inf>-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO<inf>2</inf>-Pd material allows improvement in sensitivity of NO<inf>2</inf> by an order of magnitude compare the classical Pd based gate field effect sensors.","PeriodicalId":391606,"journal":{"name":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","volume":"24 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 31st International Conference on Microelectronics (MIEL)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2019.8889648","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The article describes the result of the use SnO2-Pd thin films as a gate for structure measured ppb range of NO2 gas by the capacitive method. The technological aspects of fabrication SnO2-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO2-Pd material allows improvement in sensitivity of NO2 by an order of magnitude compare the classical Pd based gate field effect sensors.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
