Jiyoung Yoon, Bumgi Lee, Jaehee Song, Bokyoung Kang, Sangho Lee, Doh-Soon Kwak, Heonsang Lim, Ilsang Park, Jonghoon Kim, S. Pae
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引用次数: 0
Abstract
This paper presents an accelerated stress of product at the wafer level for quality evaluations by performing pre-assessment of stand-by stress-related deteriorations. It is a customized defect-inducing evaluation methodology designed to have consistency with longer term package level test. The test was conducted on 18-nm 8Gb DDR4 DRAM wafers under various time and voltage stress conditions at elevated temperature to find the optimal condition for quality monitoring purpose. Then, the screen-ability was empirically verified through physical failure analysis and statistically verified through Fisher's Exact Test.