Modeling substrate noise generation in CMOS digital integrated circuits

M. Nagata, T. Morie, A. Iwata
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引用次数: 15

Abstract

A time-series divided parasitic capacitance model accurately simulates substrate noise generation of practical CMOS digital integrated circuits in the time domain. The simulation of a 0.25-/spl mu/m z80 microcontroller with 62.5-MHz clock frequency costs less than 10 sec per a clock cycle including the model generation. Simulated substrate noise compares well with 200-ps 100-/spl mu/V resolution measurements in wave-shapes validated for clock frequency up to 125 MHz and shows a peak-amplitude error of less than 2% against supply-voltage scaling from 2.5 V to 1.6 V.
CMOS数字集成电路中衬底噪声产生的建模
时间序列划分寄生电容模型在时域上准确地模拟了实际CMOS数字集成电路衬底噪声的产生。对时钟频率为62.5 mhz的0.25-/spl mu/m z80微控制器的仿真,包括模型生成在内,每个时钟周期的成本不到10秒。在时钟频率高达125 MHz的波形中,模拟的衬底噪声与200-ps 100-/spl mu/V分辨率的测量结果相比较,并且在电源电压从2.5 V缩放到1.6 V的情况下,峰值幅度误差小于2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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