Intrinsic sensitivity of CdZnTe semiconductors for digital radiographic imaging

IMTC/2002. Proceedings of the 19th IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.00CH37276) Pub Date : 2002-08-07 DOI:10.1109/IMTC.2002.1006888

G. Giakos, R. Guntupalli, N. Shah, S. Vedantham, S. Suryanarayanan, S. Chowdhury, N. Patnekar, S. Sumrain, K. Mehta

引用次数: 1

Abstract

The intrinsic sensitivity of Cd/sub 1-x/Zn/sub x/Te semiconductor detectors have been theoretically modeled and experimentally measured, within the X-ray diagnostic energy range. The purpose of this study is to optimize the detector signal parameters of these solid state ionization devices for digital imaging applications. The experimental results of this study indicate that Cd/sub 1-x/Zn/sub x/Te detectors exhibit good intrinsic sensitivity.

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CdZnTe半导体数字射线成像的本征灵敏度

在x射线诊断能量范围内，对Cd/sub - 1-x/Zn/sub -x/ Te半导体探测器的本征灵敏度进行了理论建模和实验测量。本研究的目的是优化这些用于数字成像应用的固态电离器件的探测器信号参数。实验结果表明，Cd/sub - 1-x/Zn/sub -x/ Te探测器具有良好的本征灵敏度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IMTC/2002. Proceedings of the 19th IEEE Instrumentation and Measurement Technology Conference (IEEE Cat. No.00CH37276)

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