Suppression of random-dopant-induced characteristic fluctuation in 16 nm MOSFET devices using dual-material gate

Abstract

In this work, we for the first time explore the dual material gate (DMG) and inverse DMG devices for suppressing random dopant fluctuation (RDF)-induced characteristics fluctuation in 16-nm MOSFET devices. The physical mechanism of DMG devices to suppress RDF are investigated and discussed. The improvement of DMG for suppressing the RDF-induced Vth, Ion, and Ioff fluctuation are 28%, 12.3%, and 59%, respectively.