Voltage Stacked Design of a Microcontroller for Near/Sub-threshold Operation

K. Singh, B. Bruin, J. Huisken, Hailong Jiao, J. P. D. Gyvez
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引用次数: 3

Abstract

Integrated systems operating in the near/sub-threshold region offer low power and energy consumption. Such systems, however, typically suffer from low efficiency in power delivery, thereby leading to ineffective power savings. In this paper, a voltage stacking system with a RISC-V microcontroller Pulpino at the bottom voltage stack and memory arrays on the top stack is proposed. The memory arrays operate at 0.7 V supply voltage, while the microcontroller operate at 0.4 V supply voltage (near/sub-threshold region) by using the leakage currents from the memory arrays. Instead of using complex voltage regulators, a simple current sink voltage controller with low area and energy overheads is used to stabilize the intermediate voltage rail between the top and bottom power domains. To the best of our knowledge, this is the first work proposing voltage stacking for near/sub-threshold systems. Implemented in a 28-nm FDSOI CMOS technology, the proposed voltage stacking system reduces the power consumption by up to 43% as compared to the conventional implementation in a flat voltage domain.
近/次阈值操作微控制器的电压叠加设计
在近阈值/亚阈值区域运行的集成系统提供低功耗和能耗。然而,这样的系统通常遭受低效率的电力输送,从而导致无效的电力节省。本文提出了一种以RISC-V微控制器Pulpino为底层电压堆栈,以存储阵列为顶层电压堆栈的电压堆叠系统。存储阵列工作在0.7 V的供电电压下,而微控制器利用存储阵列的泄漏电流工作在0.4 V的供电电压(接近/亚阈值区域)。代替使用复杂的电压调节器,使用一个简单的电流吸收电压控制器,具有低面积和能量开销,以稳定上下功率域之间的中间电压轨。据我们所知,这是第一个提出近/次阈值系统的电压堆叠的工作。在28纳米FDSOI CMOS技术中实现,与平坦电压域的传统实现相比,所提出的电压堆叠系统可将功耗降低高达43%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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