Characterising the Metal-Insulator Transition in Two Dimensions

D. Neilson, J. Thakur, E. Tosatti
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引用次数: 2

Abstract

We investigate the metal—insulator transition in 2D electron systems assuming a percolation mechanism connecting through a network of metallic domains. The size of the domains is determined by the level of disorder and the strength of the electron correlations. The domains are linked through quantum tunneling. We determine the dependence of the resistivity on electron density and temperature by calculating the tunnelling transmission through the potential barriers between the domains. The results are in good agreement with recent experimental measurements.
二维金属-绝缘体过渡的表征
我们研究了二维电子系统中的金属-绝缘体跃迁,假设通过金属畴网络连接的渗透机制。畴的大小是由无序程度和电子相关强度决定的。这些域通过量子隧道连接在一起。我们通过计算电势势垒间的隧穿传输来确定电阻率对电子密度和温度的依赖关系。结果与最近的实验测量结果吻合得很好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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