Modeling of self-heating for AlGaN/GaN HEMT with thermal conductivity degradation effect

Abstract

Model of self-heating for AlGaN/GaN High Electron Mobility Transistor (HEMT) is proposed. In the model, degradation of thermal conductivity effect is included. Model data of the device is obtained using MATLAB. Physical simulation of GaN-HEMT is carried out using Technology Computer Aided Design (TCAD). The model data is compared with the simulation result to validate the model. In the simulation, temperature and defect dependent thermal conductivity is used. The drain current and temperature are analyzed using pulsed I-V simulation. It is found that the proposed model data shows excellent fit with simulation characteristics.Model of self-heating for AlGaN/GaN High Electron Mobility Transistor (HEMT) is proposed. In the model, degradation of thermal conductivity effect is included. Model data of the device is obtained using MATLAB. Physical simulation of GaN-HEMT is carried out using Technology Computer Aided Design (TCAD). The model data is compared with the simulation result to validate the model. In the simulation, temperature and defect dependent thermal conductivity is used. The drain current and temperature are analyzed using pulsed I-V simulation. It is found that the proposed model data shows excellent fit with simulation characteristics.