Strained Ge0.96Sn0.04 P-channel MOSFETs with in situ low temperature Si2H6 surface passivation

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874637

Yan Liu, Jing Yan, G. Han, Hongjuan Wang, Mingshan Liu, Chunfu Zhang, B. Cheng, Y. Hao

引用次数: 1

Abstract

We developed process flow for GeSn pMOSFET fabrication with in situ low temperature Si₂H₆ passivation module. High performance Ge_0.96Sn_0.04 pMOSFETs were fabricated. At a Q_mv of 6×10¹² cm^-2, a 24% enhancement in μ_eff is demonstrated in Ge_0.96Sn_0.04 pMOSFETs compared to Ge control.

查看原文本刊更多论文

应变Ge0.96Sn0.04 p沟道mosfet与原位低温Si2H6表面钝化

我们开发了用原位低温Si2H6钝化模块制造GeSn pMOSFET的工艺流程。制备了高性能的Ge0.96Sn0.04 pmosfet。在Qmv为6×1012 cm-2时，Ge0.96Sn0.04 pmosfet的μeff比对照组提高了24%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

自引率

0.00%

发文量