RC Snubber Design by Multi-objective Particle Swarm Optimization for SiC-MOSFET Switching Oscillation

Han Yang, Xinyan Yu, Ziheng Xu, Hui Luo, Kuan He, Han Cai, Pengfei Jin, Ke Dai
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引用次数: 0

Abstract

Switching oscillation of the SiC MOSFET would affect the stable operation of the converter. RC snubber could be used to suppress switching oscillation. Based on high-frequency equivalent circuit of half-bridge, an optimization model solved by multi-objective particle swarm optimization (MOPSO) is presented to minimize percentage overshoot (PO) and settling time (Ts) of the drain-source voltage (Vds). As a method that considers the time domain response, it is applicable to equivalent circuits of arbitrary order. The calculation results provide the selectivity of the optimal RC parameters. Simulation results in MATLAB/SIMULINK have verified the effectiveness of the method. After RC snubber is applied, PO and Ts of Vds are reduced by 41.2% and 91.5%, respectively.
基于多目标粒子群优化的SiC-MOSFET开关振荡RC缓冲器设计
SiC MOSFET的开关振荡会影响变换器的稳定工作。RC缓冲器可用于抑制开关振荡。基于半桥高频等效电路,提出了以漏源极电压(Vds)过调率(PO)和稳定时间(Ts)最小为目标的多目标粒子群优化(MOPSO)求解模型。作为一种考虑时域响应的方法,它适用于任意阶的等效电路。计算结果提供了最佳RC参数的选择性。在MATLAB/SIMULINK中的仿真结果验证了该方法的有效性。采用RC缓冲剂后,Vds的PO和Ts分别降低了41.2%和91.5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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