Meander type LPE-new approach to growth InP and GaInAsP layers

Abstract

The meander type technique of liquid phase epitaxy (LPE) is used for preparation of quaternary solid solution in GaInAsP/InP material system. Surface morphology of the layers prepared by meander type LPE has been compared with ones prepared by conventional LPE. Quaternary strained layers with composition near to Ga/sub .21/In/sub .79/As/sub .75/P/sub .25/ were grown with perpendicular lattice mismatch up to 1.6% in compression, on the InP substrates of (100) orientation. The used epitaxial technique has been modified for perspective attempt to heal the growth interfaces. Modification was tested by InP growth.