{"title":"Stitching impedance analysis of LPDDR power plane split and its impact to radio frequency interference (RFI) and signal integrity (SI)","authors":"Ying-Ern Ho, Hao-han Hsu, Jun Liao, X. Cai","doi":"10.1109/EPEPS.2017.8329745","DOIUrl":null,"url":null,"abstract":"This paper presents low-power double data rate 5 (LPDDR5) power plane stitching impedance impact to radio frequency interference (RFI) and Signal Integrity (SI). LPDDR5 power plane split causes RFI and SI degradation, but can be mitigated through appropriate power plane stitching impedance. It is found that stitching capacitor's impedance needs to be less than 10 ohm to minimize RFI and SI degradation. With stitching impedance as low as 0.5 ohm, (a) RFI is suppressed by ∼20dB, (b) near end and far end crosstalk (NEXT and FEXT) are reduced by ∼45mV, while (c) eye height (EH) and eye width (EW) improved by 57mV and 31ps respectively. These findings are helpful in improving radio performance of the system and increasing the LPDDR memory speed bin of mobile device.","PeriodicalId":397179,"journal":{"name":"2017 IEEE 26th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 26th Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPS.2017.8329745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper presents low-power double data rate 5 (LPDDR5) power plane stitching impedance impact to radio frequency interference (RFI) and Signal Integrity (SI). LPDDR5 power plane split causes RFI and SI degradation, but can be mitigated through appropriate power plane stitching impedance. It is found that stitching capacitor's impedance needs to be less than 10 ohm to minimize RFI and SI degradation. With stitching impedance as low as 0.5 ohm, (a) RFI is suppressed by ∼20dB, (b) near end and far end crosstalk (NEXT and FEXT) are reduced by ∼45mV, while (c) eye height (EH) and eye width (EW) improved by 57mV and 31ps respectively. These findings are helpful in improving radio performance of the system and increasing the LPDDR memory speed bin of mobile device.