Shota Suzuki, Tomohiko Akatsuka, A. Endou, K. Sugai
{"title":"Study on Mechanisms of SiO2-CMP","authors":"Shota Suzuki, Tomohiko Akatsuka, A. Endou, K. Sugai","doi":"10.1109/issm.2018.8651181","DOIUrl":null,"url":null,"abstract":"Polishing slurries for SiO<inf>2</inf>-CMP have been found to specifically enhance the material removal rate for SiO<inf>2</inf> under certain condition. By extracting its key parameter, further enhancement of the removal rate for SiO<inf>2</inf> is expected. In this study, key parameters to enhance removal rate for SiO<inf>2</inf> were investigated based on the consideration of the polishing mechanisms of SiO<inf>2</inf>. It was found that the most effective parameter was the adhesion force of abrasive particles to SiO<inf>2</inf>.","PeriodicalId":262428,"journal":{"name":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/issm.2018.8651181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Polishing slurries for SiO2-CMP have been found to specifically enhance the material removal rate for SiO2 under certain condition. By extracting its key parameter, further enhancement of the removal rate for SiO2 is expected. In this study, key parameters to enhance removal rate for SiO2 were investigated based on the consideration of the polishing mechanisms of SiO2. It was found that the most effective parameter was the adhesion force of abrasive particles to SiO2.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
