Investigation of the optical properties of PLD-grown Bi2Te3 and Sb2Te3

Muneer Shaik, I. Abdel-Motaleb
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引用次数: 12

Abstract

The optical properties of Bismuth Telluride (Bi2 Te3) and Antimony Telluride (Sb2Te3) thin films grown using pulsed laser deposition (PLD) were investigated. In one set of samples, the two materials were grown, on n-Si substrates, with growth temperatures ranging from 25 to 450°C. In the second set, the films were deposited on microscopic glass slides at 150 °C. The optical properties were studied using Ultra Violet-Visible (UV-Vis) and Fourier Transform Infrared (FTIR) spectroscopy techniques. Absorbance spectra were obtained using UV-Vis spectroscopy, while transmittance spectra were obtained using FTIR spectroscopy. From the FTIR spectra and employing the Tauc plots, the optical band gaps for both materials were obtained. The values of the optical band gaps for Bi2 Te3 are between 0.22-0.26 eV and for Sb2Te3 are between 0.19-0.28 eV.
pld生长的Bi2Te3和Sb2Te3光学性质的研究
研究了脉冲激光沉积(PLD)制备的碲化铋(bi2te3)和碲化锑(Sb2Te3)薄膜的光学性质。在一组样品中,两种材料在n-Si衬底上生长,生长温度范围为25至450°C。在第二组中,薄膜在150°C下沉积在显微玻璃载玻片上。利用紫外-可见(UV-Vis)和傅里叶变换红外(FTIR)光谱技术研究了其光学性质。吸收光谱采用紫外可见光谱法,透射光谱采用傅里叶红外光谱法。根据FTIR光谱和tac图,得到了两种材料的光学带隙。bi2te3的光学带隙在0.22 ~ 0.26 eV之间,Sb2Te3的光学带隙在0.19 ~ 0.28 eV之间。
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