Fabrication of sub-wavelength size aperture for nearfield optical probe on cantilever

S.S. Choi, M. Jung, J.W. Kim, J. Boo
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Abstract

The nanosize silicon oxide aperture on the cantilever array has been successfully fabricated as a near-field optical probe. Various semiconductor processes were utilized for sub-wavelength size aperture fabrication. The anisotropic etching of the Si substrate by alkaline solutions followed by anisotropic crystal orientation-dependent oxidation, anisotropic plasma etching and isotropic oxide etching was carried out. The 3 and 4 micron size dot arrays were initially photolithographically patterned on the frontside of the Si[100] wafer. After fabrication of the V-groove shape by anisotropic TMAH etching, the oxide growth at 1000/spl deg/C was performed to have an oxide etch-mask. The oxide layer on the Si[111] plane has been utilized as an etch mask for plasma dry etching and water-diluted HF wet etching for nanosize aperture fabrication. The Au thin layer was deposited on the fabricated oxide nano-size aperture on the cantilever array. The (5/spl times/1) NSOM array with 130 nm metal aperture was successfully fabricated.
悬臂近场光学探头亚波长孔径的制备
成功地在悬臂阵列上制备了纳米级氧化硅孔作为近场光学探头。不同的半导体工艺被用于亚波长孔径的制造。采用碱性溶液对硅衬底进行各向异性腐蚀,然后进行各向异性晶体取向氧化、各向异性等离子体腐蚀和各向同性氧化物腐蚀。3微米和4微米大小的点阵列最初被光刻在硅[100]晶圆的正面。采用各向异性TMAH刻蚀法制备v型槽后,在1000/spl度/C下进行氧化物生长,形成氧化物刻蚀掩膜。Si[111]平面上的氧化层已被用作等离子体干蚀刻和水稀释HF湿蚀刻的蚀刻掩膜,用于纳米孔径的制造。将金薄层沉积在悬臂阵列上制备的氧化纳米孔径上。成功制备了金属孔径为130 nm的(5/ sp1 × 1) NSOM阵列。
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