{"title":"Fabrication of sub-wavelength size aperture for nearfield optical probe on cantilever","authors":"S.S. Choi, M. Jung, J.W. Kim, J. Boo","doi":"10.1109/NANO.2002.1032218","DOIUrl":null,"url":null,"abstract":"The nanosize silicon oxide aperture on the cantilever array has been successfully fabricated as a near-field optical probe. Various semiconductor processes were utilized for sub-wavelength size aperture fabrication. The anisotropic etching of the Si substrate by alkaline solutions followed by anisotropic crystal orientation-dependent oxidation, anisotropic plasma etching and isotropic oxide etching was carried out. The 3 and 4 micron size dot arrays were initially photolithographically patterned on the frontside of the Si[100] wafer. After fabrication of the V-groove shape by anisotropic TMAH etching, the oxide growth at 1000/spl deg/C was performed to have an oxide etch-mask. The oxide layer on the Si[111] plane has been utilized as an etch mask for plasma dry etching and water-diluted HF wet etching for nanosize aperture fabrication. The Au thin layer was deposited on the fabricated oxide nano-size aperture on the cantilever array. The (5/spl times/1) NSOM array with 130 nm metal aperture was successfully fabricated.","PeriodicalId":408575,"journal":{"name":"Proceedings of the 2nd IEEE Conference on Nanotechnology","volume":"35 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2nd IEEE Conference on Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2002.1032218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The nanosize silicon oxide aperture on the cantilever array has been successfully fabricated as a near-field optical probe. Various semiconductor processes were utilized for sub-wavelength size aperture fabrication. The anisotropic etching of the Si substrate by alkaline solutions followed by anisotropic crystal orientation-dependent oxidation, anisotropic plasma etching and isotropic oxide etching was carried out. The 3 and 4 micron size dot arrays were initially photolithographically patterned on the frontside of the Si[100] wafer. After fabrication of the V-groove shape by anisotropic TMAH etching, the oxide growth at 1000/spl deg/C was performed to have an oxide etch-mask. The oxide layer on the Si[111] plane has been utilized as an etch mask for plasma dry etching and water-diluted HF wet etching for nanosize aperture fabrication. The Au thin layer was deposited on the fabricated oxide nano-size aperture on the cantilever array. The (5/spl times/1) NSOM array with 130 nm metal aperture was successfully fabricated.