Relaxor ceramic dielectric materials for multilayer ceramic capacitors

Abstract

The formation of a perovskite structure of lead zinc niobate (PZN) has been accomplished by multi-ion substitution. Nine different low-firing-type dielectric materials for a multilayer ceramic capacitor, based on modified PZN with K values ranging from 18000 to 400, were developed. The PZN-based dielectrics have 1.5 times larger K values in the same temperature coefficient of capacitance, high electrical resistivity, low dissipation factor, and low DC bias dependency, compared to conventional BaTiO/sub 3/-based dielectrics.<>