A 16K MOS RAM in Double-Polysilicon Technology

R. Mitterer, B. Rehn
{"title":"A 16K MOS RAM in Double-Polysilicon Technology","authors":"R. Mitterer, B. Rehn","doi":"10.1109/ESSCIRC.1976.5469235","DOIUrl":null,"url":null,"abstract":"A 16 384 bit-RAM with a chip area of 23 mm2, using double-polysilicon technology, is presented. The device with a 300 ns access time fits in a 16 pin package. Circuit Principles for cell and sense amplifier and read-modify-write and page-mode operation are treated.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 76: 2nd European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1976.5469235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

A 16 384 bit-RAM with a chip area of 23 mm2, using double-polysilicon technology, is presented. The device with a 300 ns access time fits in a 16 pin package. Circuit Principles for cell and sense amplifier and read-modify-write and page-mode operation are treated.
双多晶硅技术中的16K MOS RAM
提出了一种采用双多晶硅技术,芯片面积为23mm2的16384位ram。该器件具有300ns的访问时间,适合16引脚封装。讨论了单元和感测放大器、读-修改-写和页模式操作的电路原理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信