{"title":"A 16K MOS RAM in Double-Polysilicon Technology","authors":"R. Mitterer, B. Rehn","doi":"10.1109/ESSCIRC.1976.5469235","DOIUrl":null,"url":null,"abstract":"A 16 384 bit-RAM with a chip area of 23 mm2, using double-polysilicon technology, is presented. The device with a 300 ns access time fits in a 16 pin package. Circuit Principles for cell and sense amplifier and read-modify-write and page-mode operation are treated.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 76: 2nd European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1976.5469235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A 16 384 bit-RAM with a chip area of 23 mm2, using double-polysilicon technology, is presented. The device with a 300 ns access time fits in a 16 pin package. Circuit Principles for cell and sense amplifier and read-modify-write and page-mode operation are treated.