A 12V complementary RF LDMOS technology developed on a 0.18/spl mu/m CMOS platform

Abstract

Complementary RF LDMOS devices have been successfully integrated for the first time in a 0.18 /spl mu/m CMOS platform. A 12 V voltage capability and cut off frequency of 18 GHz and 12 GHz, respectively, for N-channel and P-channel devices have been obtained. In this paper, the complementary RF LDMOS architecture is presented together with device performances.