{"title":"An 0.25 /spl mu/m CMOS injection locked 5.6 Gb/s clock and data recovery cell","authors":"T. Gabara","doi":"10.1109/SBCCI.1999.802973","DOIUrl":null,"url":null,"abstract":"The harmonic clock signals in a 5.6 Gb/s NRZ (Non Return to Zero) 2/sup 7/-1 pseudo-random data stream are used to injection lock a CMOS LC tank circuit to 2.8 GHz. The data stream is deserialized into two 2.8 Gb/s data streams by a parallel combination of a positive and negative edge flip-flops (FF) clocked with alternate edges of this recovered clock. This architecture offers power savings since the data and clock rate are reduced immediately by a factor of two. A measured Bit Error Rate (BER) of less than 2E-13 at 5.6 Gb/s is achieved using a conventional 0.25 /spl mu/m CMOS technology.","PeriodicalId":342390,"journal":{"name":"Proceedings. XII Symposium on Integrated Circuits and Systems Design (Cat. No.PR00387)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. XII Symposium on Integrated Circuits and Systems Design (Cat. No.PR00387)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBCCI.1999.802973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The harmonic clock signals in a 5.6 Gb/s NRZ (Non Return to Zero) 2/sup 7/-1 pseudo-random data stream are used to injection lock a CMOS LC tank circuit to 2.8 GHz. The data stream is deserialized into two 2.8 Gb/s data streams by a parallel combination of a positive and negative edge flip-flops (FF) clocked with alternate edges of this recovered clock. This architecture offers power savings since the data and clock rate are reduced immediately by a factor of two. A measured Bit Error Rate (BER) of less than 2E-13 at 5.6 Gb/s is achieved using a conventional 0.25 /spl mu/m CMOS technology.