High frequency noise simulations of MOSFET's short channel effects using PSpice

Abstract

A simulation of MOSFET's noise due to short channel effects (SCE) is proposed using the PSpice simulator to estimate a realistic noise figure of a low noise amplifier (LNA) at RF. The noise of a submicron MOSFET has been simulated using real resistors and shown to be greater than the noise expected from long-channel MOSFETs which are considered in PSpice. The LNA circuits were designed and simulated with a 0.5 /spl mu/m CMOS MOSIS process. At 1 GHz, the simulations and calculations agree well.