J. Sun, R. Robertazzi, J. Nowak, P. Trouilloud, G. Hu, M. Gaidis, S. Brown, D. Abraham, E. O'Sullivan, W. Gallagher, D. Worledge, A. Kent
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引用次数: 5
Abstract
PMA spin-torque switchable junctions have been demonstrated with lower switching current and faster switching speed compared to IMA devices. They are promising for further technology exploration in solid-state memory applications.
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