Transparent all-carbon-nanotube thin-film transistors

Abstract

All-carbon-nanotube thin-film transistors (ACNT-TFTs) are proposed and fabricated on a transparent glass substrate by a facile solution-processed method, with 95% enriched semiconducting single-walled carbon nanotubes (SWCNTs) serving as channel materials and mixed SWCNTs as source/drain/gate electrodes. The device demonstrates excellent electronic properties with an on/off current ratio over 105, a threshold voltage of 8 V, a subthreshold swing of 1.13 V/dec, a device mobility of 10 cm2/vs, as well as a transparency of 80%. The proposed device is highly promising for the next-generation display application. Additionally, the facile fabrication method and low-temperature process match well with the requirements for manufacturing.