{"title":"Improving the immunity of SET/MOS hybrid A/D converters using Boltzmann machine networks","authors":"Zihan Zhang, Chunhong Chen","doi":"10.1109/NANO.2017.8117259","DOIUrl":null,"url":null,"abstract":"Single-electron-transistor (SET)/MOS hybrid architectures greatly simplify the design of traditional A/D converters, but are quite unreliable due to random background charges. We propose a method of implementing Boltzmann machine networks on hybrid ADCs for the improved immunity against background charges. The self-regulation with Boltzmann machines enables the digital outputs of ADC to converge to a stable state when a simulated annealing process is applied. Simulation results with a 3-bit ADC are provided to show the effectiveness of the proposed structure. A possible structure for the higher resolution of ADCs is also presented.","PeriodicalId":292399,"journal":{"name":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2017.8117259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Single-electron-transistor (SET)/MOS hybrid architectures greatly simplify the design of traditional A/D converters, but are quite unreliable due to random background charges. We propose a method of implementing Boltzmann machine networks on hybrid ADCs for the improved immunity against background charges. The self-regulation with Boltzmann machines enables the digital outputs of ADC to converge to a stable state when a simulated annealing process is applied. Simulation results with a 3-bit ADC are provided to show the effectiveness of the proposed structure. A possible structure for the higher resolution of ADCs is also presented.